AL-IN-WONProject ID: 242394
AlGaN and InAlN based microwave components
"This proposal is focused on the development of a new generation of wide band gap (WBG) GaN technology and devices for which strong impacts in term of performances, reliability and robustness are expected.
AL-IN-WON will explore two main disrupting routes:
- Next generation of WBG device based on new epi material (InAlN/GaN) for strong improvement in term of performances and reliability.
- High efficiency / High Power generation in Ku / Ka bands
It proposes to evaluate in 2 phases next generation of WBG material up to Ka Band.
The InAlN/GaN heterostructure offers the following advantages:
As InAlN/GaN is lattice matched, it offer the possibility to growth very thin layer in the range of 10nm or below WHICH IS THE MOST RELEVANT to overcome short channel effect AND GO TOWARDS HIGH frequency range up to millimeter wave range.
In0.18 Al0.82N /GaN is a new heterostructure able to give twice the drain current available from a more conventional AlGaN/GaN heterostructure. Breakdown voltage is comparable for the two heterostructures.
In0.18 Al0.82N is latticed matched to GaN and higher reliability is therefore expected compared to AlGaN/GaN.
Passivation is currently a major limitation to device operation. InAlN/GaN MOSHEMT are very promising with strong current drain improvement compared to HEMT (UltraGaN).
We plan to evaluate CW Ku and Ka Band MMIC High Power Amplifiers (HPA) and Low Noise Amplifiers (LNA). Demonstrators in Ka band will be designed based on devices coming from the run 2.
The final objective being the evaluation of InAlN/GaN compared to more conventional AlGaN/GaN very high power HEMT technology with very high breakdown voltage, high current and compliant with high power density. Regarding space application for which reliability and robustness are of major concerns, we expect to demonstrate the major breakthrough offered by GaN technology, and especially InAlN if successful."
EU contribution: EUR 365 500
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