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Affordable smart GaN IC solutions as enabler of greener applications

Project description

Powering a greener future with GaN technology

The growing global demand for energy calls for more efficient and sustainable power electronics. Conventional semiconductor materials struggle to balance energy efficiency with high performance, limiting progress in green technology. Gallium nitride (GaN) has emerged as a superior alternative, but its integration into industrial applications remains a challenge. Europe needs a robust and homegrown solution to lead in GaN-based power electronics. In this context, the EU-funded ALL2GaN project is creating a smart GaN Integration Toolbox to drive European leadership in energy-efficient electronics. With 46 partners from 12 countries, it will develop cutting-edge GaN devices, innovative substrates, and advanced packaging solutions. By optimising efficiency and reliability, ALL2GaN will unlock the full potential of GaN for a greener future.

Objective

ALL2GaN will be the backbone for the European Power Electronics Industry by offering an EU-born smart GaN Integration Toolbox. The project will provide the base for applications with significantly increased material- and energy efficiency, thus meeting the global energy needs while keeping the CO2 footprint to the minimum.
46 partners from 12 European countries will collaborate on 8 major objectives along the entire vertical value chain of power and RF electronics.
O1: Push the limits of industrial GaN devices and system-on-chip approaches for ≤ 100V
O2: Leverage the full potential of innovative substrates for GaN
O3: Achieve novel benchmark solutions for lateral GaN devices and integrated circuits ≥ 650V
O4: Reach best technical and cost performance of RF GaN on Si with novel integration concepts
O5: Break the packaging limits by application driven integrated solutions of high performance GaN products
O6: Advance the methods to evaluate and optimize reliability and robustness of GaN components, modules, and systems for shortest time-to-market and maximum product availability at the end user
O7: Demonstrate highest affordable performance for greener power electronics and RF applications
O8: Road-mapping for the future GaN technology development and applications to support long-term exploitation/business cases and European leadership beyond ALL2GaN.
The collaboration in ALL2GaN is based on a work package structure covering activities on novel power- and RF-GaN technologies for various voltage classes, latest packaging technologies, research on reliability and demonstration in 11 Use Cases.
With ambitious goals and a clear vision, ALL2GaN will unleash the energy saving and material efficiency potential of GaN semiconductors for a broad field of applications, thus being in line with the major challenges outlined in the ECS-SRIA. ALL2GaN technology will directly contribute to energy saving and cutting-edge green technology innovation as…Every Watt counts!

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Keywords

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Programme(s)

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Topic(s)

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Funding Scheme

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HORIZON-JU-IA - HORIZON JU Innovation Actions

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Call for proposal

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(opens in new window) HORIZON-KDT-JU-2022-1-IA

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Coordinator

INFINEON TECHNOLOGIES AUSTRIA AG
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 1 492 158,00
Address
SIEMENSSTRASSE 2
9500 Villach
Austria

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Region
Südösterreich Kärnten Klagenfurt-Villach
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 7 460 790,00

Participants (43)

Partners (3)

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