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On-chip memristive artificial nano-synapses and neural networks
ID: 259068
Data di inizio: 2010-11-01, Termine: 2015-10-31
These last fifty years have seen Von Neumann computing architectures boom. Nevertheless, even the most powerful digital computers cannot rapidly solve apparently simple problems such as image interpretation. However, because its structure is massively parallel and analog, the...
Programme: FP7-IDEAS-ERC
Record Number: 95287
Last updated on: 2016-12-05
Final Report Summary - NANOBRAIN (On-chip memristive artificial nano-synapses and neural networks)
There is today a revival of brain-inspired hardware architectures. Indeed, because they are massively parallel systems, neuromorphic architectures have remarkable qualities: they are fast, they don’t need a lot of power to operate, and they can work even if a large number of...
Programme: FP7-IDEAS-ERC
Record Number: 183466
Last updated on: 2016-06-07
Mid-Term Report Summary - SELFORG (Self Organization in Cytoskeletal Systems)
Structure formation and constant reorganisation of the actin cytoskeleton are key requirements for the function of living cells. While such processes are tightly controlled by the biochemical activation of the participating proteins, structures need to be formed by a physical...
Programme: FP7-IDEAS-ERC
Record Number: 179499
Last updated on: 2016-04-26
Self Organization in Cytoskeletal Systems
ID: 289714
Data di inizio: 2012-04-01, Termine: 2017-12-31
The requirements on the eukaryotic cytoskeleton are not only of high complexity, but include demands that are actually contradictory in the first place: While the dynamic character of cytoskeletal structures is essential for the motility of cells, their ability for morphologi...
Programme: FP7-IDEAS-ERC
Record Number: 105776
Last updated on: 2016-12-05
Towards spin qubits and Majorana fermions in Germanium self-assembled hut-wires
ID: 335497
Data di inizio: 2014-01-01, Termine: 2018-12-31
A renewed interest in Ge has been sparked by the prospects of exploiting its lower effective mass and higher hole mobility to improve the performance of transistors. Ge emerges also as a promising material in the field of spin qubits, as its coherence times are expected to be...
Programme: FP7-IDEAS-ERC
Record Number: 110271
Last updated on: 2016-04-26
Final Report Summary - NANODEVICE (Novel Concepts, Methods, and Technologies for the ... the Measurement and Analysis of Airborne Engineered Nanoparticles in Workplace Air)
Executive summary: An executive summary The main results of the project cover developing innovative concepts and reliable methods for characterizing ENP in workplace air with novel, portable and easy-to-use devices suitable for workplaces. Identification of relevant physico...
Programme: FP7-NMP
Record Number: 58850
Last updated on: 2013-10-01
Nuevos materiales hacen posibles las tecnologías más allá de Moore
Los semiconductores complementarios de óxido metálico (CMOS) avanzados pueden ayudar a la industria de los semiconductores de Europa a superar los límites de la ley de Moore y desarrollar dispositivos electrónicos que utilicen información no digital. Un grupo de científicos financiado por la Unión Europea aprovechó las propiedades extraordinarias de ciertos óxidos metálicos para desarrollar dispositivos electrónicos multifuncionales que superan con creces el rendimiento de los dispositivos actuales a base de silicio.
Programme: FP7-NMP
Record Number: 91875
Last updated on: 2016-11-24
Available languages: DE, EN, ES, FR, IT, PL
Novel materials enable More than Moore technologies
Advanced complementary metal-oxide semiconductors (CMOSs) can help the European semiconductor industry reach beyond the confines of Moore's law and develop electronic devices utilising non-digital information. EU-funded scientists exploited the phenomenal properties of metal oxides to develop multifunctional electronic devices that far exceed the performance of current silicon-based devices.
Programme: FP7-NMP
Record Number: 91875
Last updated on: 2016-11-24
Available languages: DE, EN, ES, FR, IT, PL
De nouveaux matériaux permettent de dépasser la loi de Moore
Les semi-conducteurs à oxydes métalliques complémentaires (CMOS, pour complementary metal-oxide semiconductors) pourraient permettre à l'industrie des semi-conducteurs de dépasser les limites de la loi de Moore et de développer des dispositifs électroniques capables d'exploiter les informations non digitales. Des chercheurs financés par l'UE ont utilisé les propriétés phénoménales des oxydes métalliques pour développer des dispositifs électroniques multifonctionnels dont les performances dépassent de loin celles des appareils basés sur le silicium.
Programme: FP7-NMP
Record Number: 91875
Last updated on: 2016-11-24
Available languages: DE, EN, ES, FR, IT, PL
Nowe materiały pozwalają na tworzenie technologii More than Moore
Zaawansowane półprzewodniki CMOS mogą pomóc europejskiemu przemysłowi półprzewodników w przezwyciężeniu ograniczeń prawa Moore'a i tworzeniu urządzeń elektronicznych wykorzystujących informacje niecyfrowe. Naukowcy z UE wykorzystali fenomenalne właściwości tlenków metali do stworzenia wielofunkcyjnych urządzeń elektronicznych, które są daleko bardziej wydajne niż aktualnie dostępne urządzenia oparte na krzemie.
Programme: FP7-NMP
Record Number: 91875
Last updated on: 2016-11-24
Available languages: DE, EN, ES, FR, IT, PL
12 3 4 5 6 7 8 9 10 > >| 
List retrieved on: 2016-12-05