Final Report - PIOS (Photonic integration on silicon germanium)
Project ID: 239444Funded under: FP7-PEOPLE
This is the summary report of the PIOS project. Funded under the European Commission's Seventh Framework Programme (FP7), PIOS sought to the develop the technology for silicon-germanium (SiGe)-based, integrated optoelectronic devices on multiple hydrogen anneal for heteroepitaxy-grown SiGe multi-quantum-well structures. The report summarises the project objectives and activities as well as the achievements regarding the SiGe optoelectronics and describes the recent developments and contributions to very-large-scale integration (VLSI) compatible optoelectronic device technology in terms of design, fabrication, characterisation and analysis of novel devices.
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Record Number: 16138 / Last updated on: 2011-04-14