High performance GaAs polarized electron source for use in inverse photoemission spectroscopy
The design and operating properties of a GaAs polarized electron source are presented. An electron optical system is described that passes more than 80% of the emitted electrons at 10 1.0 E-6 A to the target under low-energy (7-20eV) parallel beam conditions. Laser excitation can give rise to abnormal energy distributions of the photoemitted electron beam. The existence of longitudinal modes gives a possible explanation for this behaviour, which can be avoided by using a mode stabilized light source. The overall performance of the polarised electron source is demonstrated by inverse photoemission spectra from Ni(110).
Bibliographic Reference: Article: Rev. Sci. Instrum., Vol. 59 (1988) No. 9, pp. 1933-1940
Record Number: 198910186 / Last updated on: 1994-12-01
Original language: en
Available languages: en