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Abstract

The design and operating properties of a GaAs polarized electron source are presented. An electron optical system is described that passes more than 80% of the emitted electrons at 10 1.0 E-6 A to the target under low-energy (7-20eV) parallel beam conditions. Laser excitation can give rise to abnormal energy distributions of the photoemitted electron beam. The existence of longitudinal modes gives a possible explanation for this behaviour, which can be avoided by using a mode stabilized light source. The overall performance of the polarised electron source is demonstrated by inverse photoemission spectra from Ni(110).

Additional information

Authors: KOLAC U, Max-Planck-Institut fur Plasmaphysik, Garching bei Munchen (DE);DONATH M, Max-Planck-Institut fur Plasmaphysik, Garching bei Munchen (DE);ERTL K, Max-Planck-Institut fur Plasmaphysik, Garching bei Munchen (DE);LIEBL H, Max-Planck-Institut fur Plasmaphysik, Garching bei Munchen (DE);DOSE V, Max-Planck-Institut fur Plasmaphysik, Garching bei Munchen (DE)
Bibliographic Reference: Article: Rev. Sci. Instrum., Vol. 59 (1988) No. 9, pp. 1933-1940
Record Number: 198910186 / Last updated on: 1994-12-01
Category: PUBLICATION
Original language: en
Available languages: en