Photocurrent measurements at amorphous hydrogenated carbon films
Amorphous hydrogenated carbon (a-C:H) films used in nuclear fusion devices may possibly exhibit semiconductor behaviour. This report aims to characterise a-C:H films deposited on tungsten by RG-discharge, in terms of their semiconductor properties in aqueous electrolytes. At potentials positive of -0.3V, tungsten oxide is formed, allowing anodic photocurrents to occur. Below this potential, no significant currents are observed. At potentials negative of -0.9V, appreciable extents of hydrogen evolution are found at the tungsten electrode.
Bibliographic Reference: Paper presented: Annual Meeting of the American Electrochemical Society, Atlanta (US), May 15-20, 1988
Availability: Available from (1) as Paper EN 34529 ORA
Record Number: 198910312 / Last updated on: 1994-12-01
Original language: en
Available languages: en