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Abstract

Depth profiles of 10-keV deuterium implanted in nickel were obtained during implantation through elastic recoil detection between 233 and 313 K. The profiles were allowed to reach saturation at each measured temperature. At the lowest temperature, measurements with various implantation fluxes were performed. Aside from surface peaks, the depth profiles show a uniform density of deuterium in the implanted layer and the shape of these profiles is independent of the sample temperature or implantation fluence or flux. The temperature and fluence dependence could be successfully reproduced with a trapping-detrapping model considering three different trap binding energies. Two of the model parameters are in good agreement with previous calculations performed to reproduce re-emission measurements.

Additional information

Authors: PETITPIERRE O, Max-Planck-Institut für Plasmaphysik, D-8046 Garching bei München (DE);MÖLLER W, Max-Planck-Institut für Plasmaphysik, D-8046 Garching bei München (DE);SCHERZER B M U, Max-Planck-Institut für Plasmaphysik, D-8046 Garching bei München (DE);MOLLER W, Max-Planck-Institut fur Plasmaphysik, D-8046 Garching bei Munchen (DE)
Bibliographic Reference: Article: Journal of Applied Physics, Vol. 65 (1989), No. 5, pp. 1893-1897
Record Number: 198911092 / Last updated on: 1994-12-01
Category: PUBLICATION
Original language: en
Available languages: en