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  • On the growth of segregated C layers on top of Fe films on pyrolytic graphite samples during high-fluence D(+) irradiation at elevated temperature


On Fe films evaporated on pyrolytic graphite, thick C layers segregate during high temperature (above about 800 K) light ion irradiation if the penetrating ions are energetic enough to reach the Fe-graphite interface. The thickness of the C segregated layer and the C depth distribution in the Fe film have been determined with 2-MeV 4He(+) Rutherford backscattering. A steady-state carbon overlayer is reached at high fluences (above about 1.0 E19 particles/cm2), the thickness of which depends on the energy of the irradiating beam for a given thickness of the Fe evaporated film. The anisotropic structure of the pyrolytic graphite substrate influences the thickness of the steady-state C overlayer, thicker C layers being measured for edge-orientated C substrates. Using the Monte Carlo code TRIM, the production of defects in the graphite substrate has been calculated for different thicknesses of the C overlayer. The total amount of defects produced in the graphite substrate has been identified as the parameter regulating the growth and the steady-state value of the C overlayer. With depth distributions of defect production generated by TRIM as source functions, the diffusion of C interstitials in graphite under the influence of recombination with vacancies has been modelled. The segregating C fluxes are identified with the fluxes of interstitials arriving at the Fe/graphite substrate interface for a suitable choice of the parameters in the diffusion equation.

Additional information

Authors: SANTANIELLO A, Max-Planck-Institut für Plasmaphysik, D-8046 Garching bei München (DE);MÖLLER W, Max-Planck-Institut für Plasmaphysik, D-8046 Garching bei München (DE);ROTH J, Max-Planck-Institut für Plasmaphysik, D-8046 Garching bei München (DE);MOLLER W, Max-Planck-Institut fur Plasmaphysik, D-8046 Garching bei Munchen (DE)
Bibliographic Reference: Article: Journal of Applied Physics, Vol. 65 (1989) No. 9, pp. 3400-3406
Record Number: 198911094 / Last updated on: 1994-12-01
Original language: en
Available languages: en
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