Dynamic computer simulation of high energy ion implantation
For the simulation of high energy, high fluence implantation, dynamic codes are necessary which take into account the modification of the substance due to the presence of the implants and due to collisional effects. In the present paper, a binary collision simulation program is described and its applicability to 200 keV and 1 MeV implantations of oxygen and nitrogen into silicon is demonstrated. The high fluence dynamic implantation profiles are considerably broadened with respect to the static profiles. It is found that the broadening is mainly related to the swelling and the altered slowing down in the implanted layer, whereas sputtering is only important for the surface erosion and thereby the net shift of the implantation profiles. The contribution of the collisional transport of target atoms can be neglected.
Bibliographic Reference: Article: Materials Science and Engineering, Vol. B2 (1989), pp. 21-25
Record Number: 198911095 / Last updated on: 1994-12-01
Original language: en
Available languages: en