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Abstract

The effect of thin RuO-2 surface films on the photoelectrochemical properties of two p-type semiconductors, GaAs and Se, was investigated. The onset potentials of the photocurrents in redox couple free electrolytes were displaced anodically. For Se electrodes in the Fe**2>f4< **v< /Fe**3>f4< **v< redox electrolyte a drastic increase of the quantum efficiency of the saturation photocurrent by a factor of 3 was observed. No significant displacement of the flat band potentials was effected. Corrosion was inhibited by the presence of RuO-2 films. The results are tentatively interpreted in the form of a two step charge transfer model.

Additional information

Authors: GISSLER W, JRC ISPRA ESTAB. (ITALY);MC EVOY A J JRC ISPRA ESTAB. (ITALY), JRC ISPRA ESTAB. (ITALY)
Bibliographic Reference: RIUNIONE ANNUALE DELL'AEI, CAGLIARI (ITALY) OCT. 2-5, 1983 - WRITE TO CEC LUXEMBOURG, DG XIII/A2, POB 1907 MENTIONING PAPER I 31146 ORA
Availability: Can be ordered online
Record Number: 1989122022200 / Last updated on: 1987-01-01
Category: PUBLICATION
Available languages: it