DO H-SIA COMPLEXES INTERACT WITH IMPLANTED THE IN MO?
It has recently been suggested that the diffusion/permeation of hydrogen implanted in Mo and Ni is strongly enhanced by the formation of stable and mobile hydrogen self-interstitial atom complexes. This suggestion is based partly on observations of a strong influence of these complexes on implanted He profiles. We present measurements showing this effect to be negligible.
Bibliographic Reference: RADIATION EFFECTS LETTERS, VOL. 76 (1983), NO. 5, PP. 169-172
Record Number: 1989122030300 / Last updated on: 1987-01-01
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