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Abstract

A set of 100 silicon specimens has been prepared with a nominal implanted dose of 5 x 10**15 Bi atoms cm**- 2-. The samples have been analyzed by Rutherford backscattering. The lateral uniformity of the bismuth implantation has been tested by the intercomparison of all samples. Absolute calibration for six of the samples has been achieved by comparison with carefully deposited thin films.

Additional information

Authors: MITCHELL I V, JRC GEEL ESTAB. (BELGIUM);ESCHBACH H L, JRC GEEL ESTAB. (BELGIUM);AVALDI L, JRC GEEL ESTAB. (BELGIUM);DOBMA W JRC GEEL ESTAB. (BELGIUM), JRC GEEL ESTAB. (BELGIUM)
Bibliographic Reference: NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH, VOL. 218 (1983), PP. 91-96
Record Number: 1989122075400 / Last updated on: 1987-01-01
Category: PUBLICATION
Available languages: en