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Abstract

The photoelectrochemical behaviour of several semiconductor electrodes with and without thin ruthenium dioxide coatings have been investigated. Ruthenium dioxide has a metallic character and is known for its property both as oxidizing and reducing catalyst. The ruthenium dioxide coatings have been prepared by r.f. reactive sputtering from a ruthenium dioxide powder target. The chemical composition of the films has been determined by ESCA measurements. The photoelectrochemical investigations comprised the measurement of current vs potential characteristics, space charge capacity vs potential dependences, transient phenomena, corrosion processes and cell performance tests. The photoelectrochemical behaviour of only p-type semiconductor electrodes is favourably influenced by the presence of ruthenium dioxide coatings. In general a shift of the onset potential of the photocurrent by some tenths of a volt but no corresponding shift in flat potential is observed indicating that essentially the kinetics of the charge transfer process is influenced. In some cases, however, these beneficial effects of ruthenium dioxide coatings are accompanied by a strong increase of dark current.

Additional information

Authors: MCEVOY A J UNIVERSITY COLLEGE, GALWAY (IRELAND) GISSLER W JRC ISPRA ESTAB. (ITALY) , UNIVERSITY COLLEGE, GALWAY (IRELAND);JRC ISPRA ESTAB. (ITALY)
Bibliographic Reference: EUR 9315 EN (1984) MF, 62 P., BFR 120, BLOW-UP COPY BFR 310, EUROFFICE, LUXEMBOURG, POB 1003
Availability: Can be ordered online
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