APPLICATION OF THE XPS TECHNIQUES TO THE STUDY OF GEL LAYERS FORMED UNDER DIFFERENT REDOX CONDITIONS ON LEACHED GLASS SURFACES
Surface analysis has been conducted on samples leached in a Soxhlet apparatus at 100 degrees C in presence and in absence of air. The XPS and RBS techniques were applied to analyse the content of the silicon, iron and uranium while the nuclear reaction method was utilized to analyse the hydrogen content. The anoxic environment favours the release of iron while decreasing the dissolution of uranium. Hydrogen content is always higher in samples leached in presence of air. Silicon depletion is evident in all cases. The diffusion process seems to regulate the growth of the layer on the glass surface. After long leaching time a detachment, at least partial, of this layer is observed.
Bibliographic Reference: 1984 ANNUAL MEETING OF THE MATERIALS RESEARCH SOCIETY, BOSTON (USA), NOV. 26-30, 1984 WRITE TO CEC LUXEMBOURG, DG XIII/A2, POB 1907 MENTIONING PAPER E 31831 ORA
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Record Number: 1989123027000 / Last updated on: 1987-01-01
Available languages: en