PHOTOELECTROCHEMICAL EFFECTS ON P-SILICON OF RUTHENIUM DIOXIDE THIN FILMS
The catalytic effect on the photoelectrochemical behaviour of p-type silicon surfaces, due to thin ruthenium dioxide films, was investigated. Film deposition was by reactive rf sputtering. There was a drastic anodic displacement of the onset potential for the hydrogen evolution reaction in 2M HCl, and an analogous displacement in the photoresponse onset potential in an electrolyte containing the ferrous - ferric redox couple. There was also a stabilizing effect due to the ruthenium dioxide coating. The results are interpreted on a MIS model. A solar cell conversion efficiency of 5.1 % was obtained in the V**2+/V**3+ redox electrolyte.
Bibliographic Reference: SOLAR ENERGY MATERIALS, VOL. 10 (1984), PP. 309-316
Record Number: 1989123037200 / Last updated on: 1987-01-01
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