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Abstract

Two techniques for the deposition of a-Si:H, and of its alloys with C and Ge, are described: conventional RF glow discharge, and new method: dual ion-beam sputtering (DIBS). The basic physical properties (both structural and electronic) of the amorphous films produced by the two methods are comparatively investigated by optical and transport characterization techniques. Visible and IR transmission, conductivity and spectral photoconductivity measurements show that the quality of our glow discharge films is for the moment superior to DIBS material. However, the DIBS technique has proved of great promise towards obtaining a-Si:H of high density, controlling hydrogen content and incorporation, and in situ production of solar cells. Preliminary photovoltaic devices, made with glow discharge material and based on p-i-n and Schottky barrier heterojunction structures + have been realized. In all, it can be concluded that most of the objectives of the program have been reached, in particular: feasibility of the DIBS technique and systematic characterization; and solution of the basic problems encountered in the fabrication of cells (eg material quality, doping, alloying with carbon for the window layer, contact formation.)

Additional information

Authors: COLUZZA C, UNIVERSITA DI ROMA I, ROMA (ITALY);FORTUNATO G, UNIVERSITA DI ROMA I, ROMA (ITALY);SCAGLIONE S, UNIVERSITA DI ROMA I, ROMA (ITALY);MIRIAMETRO A, UNIVERSITA DI ROMA I, ROMA (ITALY);EVANGELISTI F, UNIVERSITA DI ROMA I, ROMA (ITALY);FROVA A, UNIVERSITA DI ROMA I, ROMA (ITALY);DELLA SALA D, UNIVERSITA DI ROMA I, ROMA (ITALY);MARIUCCI M, UNIVERSITA DI ROMA I, ROMA (ITALY);FIORINI P UNIVERSITA DI ROMA I, ROMA (ITALY), UNIVERSITA DI ROMA I, ROMA (ITALY)
Bibliographic Reference: EUR 9824 EN (1985) MF, 107 P., BFR 300, BLOW-UP COPY BFR 535, EUROFFICE, LUXEMBOURG, POB 1003
Availability: Can be ordered online
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