Community Research and Development Information Service - CORDIS

Abstract

The aim of the present work has been an experimental investigation of some advanced methods for preparation of low cost silicon pn-junction solar cells. The original project proposal comprised the application of ion implantation (with and without mass separation) combined with pulsed laser annealing, and laser induced diffusion from deposited surface layers. The actual project has diverged from this plan by inclusion of the new and very promising similar techniques where laser processing has been substituted by short duration incoherent light exposure from a xenon arc lamp. Boron and boronfluoride implantation have been studied after furnace annealing, neodymium laser annealing, and incoherent light annealing. Implantations with high fluorine content and associated damage have been shown to be easier to anneal by the close to-bandgap Nd-laser light than pure boron implantations. An appreciable, but still harmless amount of fluorine is retained in the sample after laser exposure.

Additional information

Authors: NYLANDSTED LARSEN A, TECHNICAL UNIVERSITY OF DENMARK, LYNGBY (DENMARK);DRUD NIELSEN L TECHNICAL UNIVERSITY OF DENMARK, LYNGBY (DENMARK), TECHNICAL UNIVERSITY OF DENMARK, LYNGBY (DENMARK)
Bibliographic Reference: EUR 9867 EN (1985) MF, 85 P., BFR 150, BLOW-UP COPY BFR 425, EUROFFICE, LUXEMBOURG, POB 1003
Availability: Can be ordered online
Record Number: 1989123114400 / Last updated on: 1987-01-01
Category: PUBLICATION
Available languages: en
Follow us on: RSS Facebook Twitter YouTube Managed by the EU Publications Office Top