PRODUCTION OF SOLAR CELLS ON THE BASIS OF LOW COST SILICON BY APPLICATION OF ION IMPLANTATION AND LIGHT INDUCED TRANSIENT HEATING
The aim of the present work has been an experimental investigation of some advanced methods for preparation of low cost silicon pn-junction solar cells. The original project proposal comprised the application of ion implantation (with and without mass separation) combined with pulsed laser annealing, and laser induced diffusion from deposited surface layers. The actual project has diverged from this plan by inclusion of the new and very promising similar techniques where laser processing has been substituted by short duration incoherent light exposure from a xenon arc lamp. Boron and boronfluoride implantation have been studied after furnace annealing, neodymium laser annealing, and incoherent light annealing. Implantations with high fluorine content and associated damage have been shown to be easier to anneal by the close to-bandgap Nd-laser light than pure boron implantations. An appreciable, but still harmless amount of fluorine is retained in the sample after laser exposure.
Bibliographic Reference: EUR 9867 EN (1985) MF, 85 P., BFR 150, BLOW-UP COPY BFR 425, EUROFFICE, LUXEMBOURG, POB 1003
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Record Number: 1989123114400 / Last updated on: 1987-01-01
Available languages: en