MICROSTRUCTURAL CHANGES INDUCED ON BOROSILICATE GLASSES BY 1 MEV ELECTRONS
Radiation damage to borosilicate glass has been studied using a high voltage electron microscope to simultaneously generate and image structural changes. At low doses and dose rates (phi <or= 5 x 10**24 electrons m**-2, F <or= 5 x 10**22 el m**-2 s**-1), ionic depletion generates a new crystalline phase rich in SiO-2. For incubation doses exceeding 5 x 10**24 electrons m**-2, gas bubbles are observed. High damage rates are necessary for bubble nucleation though not for their subsequent growth. The critical nucleation flux increases rapidly with irradiation temperature, whereas the gas precipitation efficiency remains constant above 300 K.
Bibliographic Reference: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, VOL. 46 (1985), NO. 3, PP. 287-296
Record Number: 1989124012800 / Last updated on: 1987-01-01
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