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Abstract

Chemical vapour deposition in a hot wall reactor placed in furnace is possible without deposition of silicon on the quartz ware of the cell or the wafer boat. In terms of crystalline quality the best results are obtained, for growth with SiHCl - 3, low Cl/H ratio and high temperatures, improvement in growth rate possibly can be achieved by working with SiCl-4 so that the input mixture is already closer to the equilibrium value. The most promising results however are to be expected from the Si - I - H system, because the adsorption of iodine will be smaller than for chlorine, leading to a good quality of the crystalline epilayer also for higher input concentrations where the growth rate is higher. Quite a number of questions are still present, but in principal an interesting method for a cheap mass production of epitaxial silicon has become available.

Additional information

Authors: OEI Y S, RESEARCH INSTITUTE OF MATERIALS, SOLID STATE CHEMISTRY, CATHOLIC UNIVERSITY OF NIJMEGEN (THE NETHERLANDS);HANSSEN J H L, RESEARCH INSTITUTE OF MATERIALS, SOLID STATE CHEMISTRY, CATHOLIC UNIVERSITY OF NIJMEGEN (THE NETHERLANDS);DE MOOR H H C, RESEARCH INSTITUTE OF MATERIALS, SOLID STATE CHEMISTRY, CATHOLIC UNIVERSITY OF NIJMEGEN (THE NETHERLANDS);DOMINGUEZ C, RESEARCH INSTITUTE OF MATERIALS, SOLID STATE CHEMISTRY, CATHOLIC UNIVERSITY OF NIJMEGEN (THE NETHERLANDS);VAN DEN LINDEN H A, RESEARCH INSTITUTE OF MATERIALS, SOLID STATE CHEMISTRY, CATHOLIC UNIVERSITY OF NIJMEGEN (THE NETHERLANDS);GILING L J, RESEARCH INSTITUTE OF MATERIALS, SOLID STATE CHEMISTRY, CATHOLIC UNIVERSITY OF NIJMEGEN (THE NETHERLANDS);BLOEM J RESEARCH INSTITUTE OF MATERIALS, SOLID STATE CHEMISTRY, CATHOLIC UNIVERSITY OF NIJMEGEN (THE NETHERLANDS), RESEARCH INSTITUTE OF MATERIALS, SOLID STATE CHEMISTRY, CATHOLIC UNIVERSITY OF NIJMEGEN (THE NETHERLANDS)
Bibliographic Reference: EUR 9987 EN (1985), MF, 33 P., BFR 150, BLOW-UP COPY BFR 200, EUROFFICE, LUXEMBOURG, POB 1003
Availability: Can be ordered online
Record Number: 1989124045900 / Last updated on: 1987-01-01
Category: PUBLICATION
Available languages: en