OPTIMIZATION OF POLYCRYSTALLINE SILICON SOLAR CELLS PRODUCED BY ION IMPLANTATION AND PULSED LASER ANNEALING
Polycrystalline silicon solar cells have been made by shallow, mass analyzed ion implantation followed by Q switched ruby laser annealing. The influence of surface finish and of thermal treatments during and after pulsed laser annealing on cell performance has been studied. Screen printed contacts have been applied on these cells and the influence of implanted dose as well as laser annealing conditions on contact resistance has been investigated. It was found that smooth, acid etched surfaces give better results than texturized sodium etched surfaces. With pulsed laser annealing on a heated (350 degrees C) substrate it is easier to achieve good cell performance than with p.1.a at room temperature. A thermal anneal at 450 degrees C after p.1.a improves V-oc considerably. The problem of series resistance, which is encountered when screen printed contacts are applied to ion implanted junctions can be eliminated by increasing the implanted dose. By doing so, we have obtained over 10% AM 1.5 efficiency on 90 m**2 polysilicon cells.
Bibliographic Reference: EUR 10002 EN (1985) MF, 43 P., BFR 150, BLOW-UP COPY BFR 215, EUROFFICE, LUXEMBOURG, POB 1003
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Record Number: 1989124067700 / Last updated on: 1987-01-01
Available languages: en