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Abstract

In the first part of this report special lattice situations are described for interstitial sites in different polytypes, primarily in silicon carbide. Whereas a part of such interstitial positions are identical to those that have been characterized in precedent reports, other configurations must be seen as a combination of both "cubic" and "hexagonal" atomic arrangements. The second part deals first with efforts to determine effective radii of single foreign atoms (impurities) in the silicon lattice via their effective charges. This was partially done by appropriate equations, partially by graphical fitting. When plotting the resulting data versus the different segregation coefficients k-o it was hoped to obtain rather clear functional behaviour. It turned out, however, that the presently available experimental data needed revision and completion as well before a more detailed judgement of the different theoretical models is possible.

Additional information

Authors: SIRTL E HELIOTRONIC GMBH, BURGHAUSEN (GERMANY) SPINDLER O WACKER- CHEMITRONIC GMBH, BURGHAUSEN (GERMANY) , HELIOTRONIC GMBH, BURGHAUSEN (GERMANY);WACKER- CHEMITRONIC GMBH, BURGHAUSEN (GERMANY)
Bibliographic Reference: EUR 9938 EN (1985), MF, 37 P., BFR 150, BLOW-UP COPY BFR 200, EUROFFICE, LUXEMBOURG, POB 1003
Availability: Can be ordered online
Record Number: 1989124089600 / Last updated on: 1987-01-01
Category: PUBLICATION
Available languages: en