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Abstract

Concentration profiles of 4-He implanted with energies of 0.25-80 keV in silicon have been measured. The method employed + ion beam sputter erosion in conjunction with the mass spectrometric detection of sputter released He atoms + offers several advantages over other techniques used for helium analysis: He depth distributions in very near surface regions (< 10 nm) of solids are determined with a detection sensitivity of 5 X 10**18 He atoms/cm**3 in Si. Furthermore, a depth resolution of 3.1 nm is demonstrated as deduced from the measured interface width between an undoped and a He doped layer. Over the energy regime investigated the experimentally determined values of the mean projected range and the range straggling agree very well with theoretical data for amorphous silicon.

Additional information

Authors: GNASER H, INSTITUT FUER GRENZFLAECHENFORSCHUNG UND VAKUUMPHYSIK, KERNFORSCHUNGSANLAGE JUELICH GMBH (GERMANY);BAY H L, INSTITUT FUER GRENZFLAECHENFORSCHUNG UND VAKUUMPHYSIK, KERNFORSCHUNGSANLAGE JUELICH GMBH (GERMANY);HOFER W O INSTITUT FUER GRENZFLAECHENFORSCHUNG UND VAKUUMPHYSIK, KERNFORSCHUNGSANLAGE JUELICH GMBH (GERMANY), INSTITUT FUER GRENZFLAECHENFORSCHUNG UND VAKUUMPHYSIK, KERNFORSCHUNGSANLAGE JUELICH GMBH (GERMANY)
Bibliographic Reference: NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH, VOL. B15 (1986), PP. 49-53
Record Number: 1989125033500 / Last updated on: 1987-03-01
Category: PUBLICATION
Available languages: en
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