RADIATION ENHANCED DIFFUSION BELOW RECOVERY STAGE III
In well annealed materials, no randomly distributed sinks for point defects are present and radiation induced point defects annihilate mainly by pair recombination. Their annihilation at surfaces or grain boundaries or dislocations is negligibly small. Small numbers of dislocations introduced in well annealed materials increase the diffusion rate, i.e. the mobility of point defects because of the large interaction fields between dislocations and defects. Interstitial clusters formed during irradiation at "low" temperatures also cause an increase of the mobility of defects, resulting in an increased diffusion rate. The concentration of defects in dynamic equilibrium at "high" temperatures can be calculated in the presence of very small interstitial clusters by means of rate equations.
Bibliographic Reference: VACANCIES AND INTERSTITIALS IN METALS AND ALLOYS, BERLIN (GERMANY), SEPT. 14-19, 1986 WRITE TO CEC LUXEMBOURG, DG XIII/A2, POB 1907 MENTIONING PAPER E 32770 ORA
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Record Number: 1989125059900 / Last updated on: 1987-11-01
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