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Authors: TRAN M Q, CENTRE DE RECHERCHES EN PHYSIQUE DES PLASMAS, ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (SWITZERLAND);UNIVERSITY OF TECHNOLOGY, GOETEBORG (SWEDEN);PERRENOUD A, CENTRE DE RECHERCHES EN PHYSIQUE DES PLASMAS, ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (SWITZERLAND);UNIVERSITY OF TECHNOLOGY, GOETEBORG (SWEDEN);ALBERTI S, CENTRE DE RECHERCHES EN PHYSIQUE DES PLASMAS, ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (SWITZERLAND);UNIVERSITY OF TECHNOLOGY, GOETEBORG (SWEDEN);ISAAK B, CENTRE DE RECHERCHES EN PHYSIQUE DES PLASMAS, ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (SWITZERLAND);UNIVERSITY OF TECHNOLOGY, GOETEBORG (SWEDEN);MUGGLI P, CENTRE DE RECHERCHES EN PHYSIQUE DES PLASMAS, ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (SWITZERLAND);UNIVERSITY OF TECHNOLOGY, GOETEBORG (SWEDEN);BONDESON A CENTRE DE RECHERCHES EN PHYSIQUE DES PLASMAS, ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (SWITZERLAND), CENTRE DE RECHERCHES EN PHYSIQUE DES PLASMAS, ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (SWITZERLAND);UNIVERSITY OF TECHNOLOGY, GOETEBORG (SWEDEN);UNIVERSITY OF TECHNOLOGY, GOETEBORG (SWEDEN), CENTRE DE RECHERCHES EN PHYSIQUE DES PLASMAS, ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (SWITZERLAND);UNIVERSITY OF TECHNOLOGY, GOETEBORG (SWEDEN)
Bibliographic Reference: INTERNATIONAL JOURNAL OF ELECTRONICS, VOL. 61 (1986), NO. 6, PP. 1029-1039
Record Number: 1989125061600 / Last updated on: 1987-12-01
Category: PUBLICATION
Available languages: en