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Abstract

Results of investigations of radiation enhanced diffusion on copper-15Al% aluminium alloys are reported where the electron flux, the irradiation temperature, and the thickness "it d" of the specimens are varied. The activation energy of ordering or of diffusion is "it Q"-"rm irr" = 0.355 eV for an electron current density of 4.25 muA cm"-2" almost independent of "it d". "it Q"-"rm irr" increases slightly with decreasing flux, and "it Q"-"rm irr" = 0.377 eV is found for 0.04 muA cm"-2" and 0.1 mm-thick specimens. This behaviour is in agreement with the assumptions that item"(1)" the migration energy of vacancies E"M"-"1V" decreases with increasing flux and item"(2)" interstitials have to jump about 30 times more often than vacancies in order to change the degree of order by the same amount. It is further found that small sink concentrations cause an acceleration of the ordering rate rather than a decrease of this quantity through an increase of the mobility of the defects. In copper-aluminium alloys almost no sinks for point defects are formed during irradiation; thus defects annihilate mainly by pair recombination even at low irradiation temperatures in contrast to results obtained for many other alloys.

Additional information

Authors: SCHUELE W JRC-ISPRA, JRC-ISPRA
Bibliographic Reference: BOOK, 13TH INTERNATIONAL SYMPOSIUM ON EFFECTS OF RADIATION ON MATERIALS, SEATTLE/USA, JUNE 23-25, 1986, PUBL. 1986, BY: THE AMERICAN SOCIETY FOR TESTING AND MATERIALS, PHILADELPHIA, USA
Record Number: 1989126088800 / Last updated on: 1989-05-01
Category: PUBLICATION
Available languages: en
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