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Abstract

Though the implantation of hydrogen into (100) silicon at 15.5 keV and 75 keV is substantially linear with fluence in the range 10"14" - 2 times 10"16" cm"-2", small non-linear phenomena are observed considering the chemical and damage profiles, as determined by secondary ion mass spectrometry and double crystal X-ray diffraction, respectively. A general theory to describe quantitatively non-linear effects in hydrogen implantation into silicon is developed and compared with experimental data; the parameters of this theory can be evaluated with "it ab initio/" MARLOWE calculations.

Additional information

Authors: CEROFOLINI G F, MICROELECTRONICS, AGRATE, MILANO;JRC ISPRA EASTB. (ITALY);IRST, POVO, TN (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY);MEDA L, MICROELECTRONICS, AGRATE, MILANO;JRC ISPRA EASTB. (ITALY);IRST, POVO, TN (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY);VOLPONES C, MICROELECTRONICS, AGRATE, MILANO;JRC ISPRA EASTB. (ITALY);IRST, POVO, TN (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY);DIERCKX R, MICROELECTRONICS, AGRATE, MILANO;JRC ISPRA EASTB. (ITALY);IRST, POVO, TN (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY);MERCURIO G, MICROELECTRONICS, AGRATE, MILANO;JRC ISPRA EASTB. (ITALY);IRST, POVO, TN (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY);ANDERLE M, MICROELECTRONICS, AGRATE, MILANO;JRC ISPRA EASTB. (ITALY);IRST, POVO, TN (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY);CANTERI R, MICROELECTRONICS, AGRATE, MILANO;JRC ISPRA EASTB. (ITALY);IRST, POVO, TN (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY);CEMBALI F, MICROELECTRONICS, AGRATE, MILANO;JRC ISPRA EASTB. (ITALY);IRST, POVO, TN (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY);FABBRI R, MICROELECTRONICS, AGRATE, MILANO;JRC ISPRA EASTB. (ITALY);IRST, POVO, TN (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY);SERVIDORI M MICROELECTRONICS, AGRATE, MILANO, MICROELECTRONICS, AGRATE, MILANO;JRC ISPRA EASTB. (ITALY);IRST, POVO, TN (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY);JRC ISPRA EASTB. (ITALY), MICROELECTRONICS, AGRATE, MILANO;JRC ISPRA EASTB. (ITALY);IRST, POVO, TN (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY);IRST, POVO, TN (ITALY), MICROELECTRONICS, AGRATE, MILANO;JRC ISPRA EASTB. (ITALY);IRST, POVO, TN (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY), MICROELECTRONICS, AGRATE, MILANO;JRC ISPRA EASTB. (ITALY);IRST, POVO, TN (ITALY);ISTITUTO LAMEL, BOLOGNA (ITALY)
Bibliographic Reference: 6TH CIRC INTERNATIONAL CONFERENCE ION BEAM MODIFICATION OF MATERIALS, TOKYO (JAPAN), JUNE, 12-17, 1988, AVAILABILITY: CEC-LUXEMBOURG, DG-XIII-C-3, POB 1907, MENTIONING PAPER EN 34127 ORA
Availability: Can be ordered online
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