NON-LINEAR PHENOMENA IN HYDROGEN IMPLANTATION INTO (100) SILICON
Though the implantation of hydrogen into (100) silicon at 15.5 keV and 75 keV is substantially linear with fluence in the range 10"14" - 2 times 10"16" cm"-2", small non-linear phenomena are observed considering the chemical and damage profiles, as determined by secondary ion mass spectrometry and double crystal X-ray diffraction, respectively. A general theory to describe quantitatively non-linear effects in hydrogen implantation into silicon is developed and compared with experimental data; the parameters of this theory can be evaluated with "it ab initio/" MARLOWE calculations.
Bibliographic Reference: 6TH CIRC INTERNATIONAL CONFERENCE ION BEAM MODIFICATION OF MATERIALS, TOKYO (JAPAN), JUNE, 12-17, 1988, AVAILABILITY: CEC-LUXEMBOURG, DG-XIII-C-3, POB 1907, MENTIONING PAPER EN 34127 ORA
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Record Number: 1989126107700 / Last updated on: 1989-06-01
Available languages: en