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Abstract

RADIATION DAMAGE IN UO(2) WAS STUDIED BY IMPLANTING TE-IONS AND KR-IONS (HEAVY AND LIGHT FISSION PRODUCTS RESPECTIVELY) INTO SINGLE CRYSTALS OF UO(2). RECOVERY WAS INVESTIGATED BY ANNEALING IMPLANTED SAMPLES AT 300 C-1500 C. ALL SAMPLES WERE ANALYSED BY THE RUTHERFORD BACKSCATTERING - CHANNELING TECHNIQUE. THE RADIATION DAMAGE SHOWED STRONG ORIENTATION DEPENDANCE, THE NUMBER OF DISPLACED ATOMS BEING MUCH HIGHER FOR <111> ORIENTATIONS THAN FOR <100>. THE NUMBER OF DISPLACED ATOMS INCREASED WITH THE IMPLANTATION FLUENCE BUT THE DISPLACEMENT EFFICIENCY DECREASED, INDICATING THAT DEFECT RECOMBINATION HAS OCCURRED DURING IMPLANTATION. THERMAL RECOVERY OF TE-IMPLANTED SAMPLES BEGINS WITH A RAPID STAGE FROM 400 C-800 C, THEN PROCEEDS MORE SLOWLY FROM 800 C-1200 C, RECOVERY OF <100> CRYSTALS BEING FASTER THAN <111>. CRYSTALS. FOR KR-ION IMPLANTATION, THE CRITICAL TEMPERATURE ABOVE WHICH RECOVERY OCCURS IS DOSE-DEPENDENT.

Additional information

Authors: TUROS A, KERNFORSCHUNGSZENTRUM, KARLSRUHE;JRC-ISPRA;MATRIKE H J, KERNFORSCHUNGSZENTRUM, KARLSRUHE;JRC-ISPRA;FRITZ S KERNFORSCHUNGSZENTRUM, KARLSRUHE, KERNFORSCHUNGSZENTRUM, KARLSRUHE;JRC-ISPRA;JRC-ISPRA, KERNFORSCHUNGSZENTRUM, KARLSRUHE;JRC-ISPRA
Bibliographic Reference: PAPER PRESENTED: INTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS, PARMA/I, AUG. 29, SEPT 2, 1988, AVAILABILITY: CEC-LUXEMBOURG, DG XIII/A2, BP 1907, MENTIONING PAPER ORA 34148 E
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