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Abstract

THIS REPORT DESCRIBES THE DEPOSITION PROCESS OF HYDROGENATED AMORPHOUS SILICON FILMS IN A COMMERCIALLY AVAILABLE ONE-CHAMBER MAGNETRON SPUTTER SYSTEM. THE SPUTTER CONDITIONS WERE INVESTIGATED BY VARIATION OF THE HYDROGEN AND ARGON PARTIAL PRESSURE, SPUTTER POWER, AND SPUTTER TEMPERATURE. THE FILMS WERE CHARACTERISED BY THE OPTICAL BAND GAP ENERGY AND THE DARK AND PHOTO CONDUCTIVITY. IN SPITE OF A SCARCE REPRODUCIBILITY FILMS OF NEARLY GLOW DISCHARGE QUALITY COULD BE PRODUCED. A NEW DOPING METHOD BY SPUTTERING FROM A HIGHLY DOPED SINGLE CRYSTAL WAFER, WHICH WAS USED AS SPUTTER TARGET, IS DESCRIBED.

Additional information

Authors: ARENZ H, JRC-ISPRA;GISSLER W, JRC-ISPRA;HAUPT J, JRC-ISPRA;HOFFMAN A, JRC-ISPRA;SCHUEBERT R JRC-ISPRA, JRC-ISPRA
Bibliographic Reference: EUR 11613 EN (1988) MF, PP 20, ECU 4.00, BLOW-UP COPY, ECU 5.00, AVAILABILITY: EUROFFICE, LUXEMBOURG, BP 1003, GDL
Availability: Can be ordered online
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