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Abstract

In the search for `cold fusion' reactions in solids loaded with deuterium atoms at high concentration, ion implantation has been used as a means to reach the required high deuterium concentration in the lattice. In the present investigation, 300 eV to 6 keV D(+) ions were injected into 3 micron thick titanium foils at room temperature and at 140 K. The protons from the D(d,p)T reaction were monitored using a solid state detector with a large solid angle, both during and after implantation. After implantation of deuterium in the titanium foil up to saturation, i.e. with about 1.8 deuterium atoms per titanium atom at room temperature, the possible fusion reaction rate at equilibrium was determined over a period of 65 h. The measured count rate was within the limits of the natural background, and an upper limit of 1.0 E-23 per deuterium pair per second was established. During implantation of deuterium at energies between 3 and 6 keV, the count rate is dominated by reactions of the incident energetic deuterons with deuterons already implanted in the foil. The D-D reaction cross-sections, evaluated at 140 K, follow closely those obtained by extrapolation of the Gamow function to low energies. During implantation of 300 eV D(+) ions, no counts from the D(d,p)T reactions were monitored, showing that even under extreme conditions of non-equilibrium the possible `cold fusion' reaction rate is smaller than the background count rate.

Additional information

Authors: ROTH J, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);BEHRISCH R, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);MÖLLER W, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);OTTENBERGER W, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);MOLLER W, Max-Planck-Institut fur Plasmaphysik, Garching bei Munchen (DE)
Bibliographic Reference: Article: Nuclear Fusion, Vol. 30 (1990) No. 3, pp. 441-446
Record Number: 199011153 / Last updated on: 1994-12-01
Category: PUBLICATION
Original language: en
Available languages: en
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