The certification of low oxygen content in semiconductor silicon (CRM 368)Funded under: FP2-BCR 4
The oxygen content of semiconductor silicon must be determined accurately in order to select the appropriate processing parameters in the manufacturing of integrated circuits. In practice, it is determined by infra-red spectrometry in the wavenumber region 900 - 1300/cm. To derive the oxygen content, the spectrum of the sample is compared to that of a reference sample with very low oxygen content. This report describes the certification of a reference material intended for use as reference samples in infrared spectrometry.
Bibliographic Reference: EUR 12927 EN (1990) 16 pp., FS, ECU 5
Record Number: 199011281 / Last updated on: 1994-12-01
Original language: en
Available languages: en