Damage recovery in the U-sublattice of ion implanted UO(2) between 5 K and 2000 K
Radiation damage was produced in UO(2) single crystals by controlled ion implantation with Kr- and Xe-ions in the energy range of 40 to 500 keV, at implantation temperatures of 5, 77 or 293 K. The RBS channelling technique was used to measure damage formation and recovery in the U-sublattice during post-implantation anneals. About 50% of the defects (probably U-interstitials) annealed below room temperature (77 and 110 K), the remaining defects (probably U-vacancies) annealed at 700-900K. At high doses, recovery was not complete until 2000K was reached (extended defects in the U-sublattice). The concept of mobility of U-interstitials below room temperature contrasts with theoretical work postulating a high migration energy for U-interstitials.
Bibliographic Reference: Paper presented: 6th European Conference "Lattice Defects in Ionic Materials", Groningen (NL), Sept. 3-7, 1990
Availability: Available from (1) as Paper EN 35463 ORA
Record Number: 199011619 / Last updated on: 1994-12-02
Original language: en
Available languages: en