Recovery stages in UO(2) at low temperatures
Formation of radiation damage and its recovery in UO(2) single crystals were investigated in the temperature range 5 to 293 K. The samples were implanted with Xe ions at 5 K and subsequently analysed in situ, using the ion-channelling technique. Successive measurements were performed during the warming-up of the sample to 293 K. Two recovery stages in the U sublattice were revealed, the first in the vicinity of 77 K and the second at 110 +/- 5 K.
Bibliographic Reference: Article: Physical Review Letters, Vol. 65 (1990) No. 10, pp. 1215-1218
Record Number: 199110321 / Last updated on: 1994-12-02
Original language: en
Available languages: en