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This paper deals with the modification produced in single crystal silicon by low energy (15.5 keV) hydrogen implantation. The experiments were carried out by using secondary ion mass spectroscopy (SIMS), Rutherford backscattering spectroscopy in channelling (RBS), infrared spectroscopy (IR) and transmission electron microscopy (TEM). A few calculations were also carried out by the MARLOWE code. Different implantation conditions were considered (low and high current densities, 77 K and room temperature). Irrespective of sample preparation, the formation of high stressing species was observed after heating at 400 C. This was ascribed to the transformation from the Si-H configuration into H(2) molecules, responsible for RBS peak and dechannelling. Direct evidence for H(2) was given by SIMS measurements; Si-H and H in bond centred (BC) sites were detected by IR spectroscopy. The out-diffusion of hydrogen was also followed in the temperature range 400-600 C.

Additional information

Authors: MEDA L, EniChem, San Donato (IT);CEROFOLINI G F, EniChem, San Donato (IT);BRESOLIN C, SGS-Thomson Microelectronics, Agrate (IT);DIERCKX R ET AL., JRC Ispra (IT);ANDERLE M, IRST, Povo (IT);CANTERI R, IRST, Povo (IT);OTTAVIANI G, Università di Modena, Modena (IT);TONINI R, Università di Modena, Modena (IT);CLAEYS C, IMEC, Leuven (BE);VANHELLEMONT J, IMEC, Leuven (BE);PIZZINI S, Università di Milano, Milano (IT);FARINA S, Università di Milano, Milano (IT)
Bibliographic Reference: Article: Journal of the Electrochemical Society, Vol. 90 (1990) pp. 456-471
Record Number: 199110513 / Last updated on: 1994-12-02
Original language: en
Available languages: en