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ESPRIT Project 369 aimed at establishing the relationship between the physico-chemical and the electrical properties of silicon oxynitride films and the relationship between the physico-chemical properties and the growth parameters. The research was carried out bearing in mind the likely applications of silicon oxynitrides in integrated circuit technology. This book presents the results of the project.

Additional information

Authors: HABRAKEN F H P M (EDITOR), Utrecht State University, Department of Atomic and Interface Physics, Utrecht (NL)
Bibliographic Reference: EUR 13343 EN (1991) 159 pp.
Availability: Springer-Verlag GmbH & Co. KG, Postfach 10 52 80, Tiergartenstrasse 17, D-6900 Heidelberg 1 (DE)
ISBN: ISBN 3-540-53954-9
Record Number: 199110692 / Last updated on: 1994-12-02
Original language: en
Available languages: en
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