Defect concentration profiles near the surface in nickel irradiated with 2 MeV electronsFunded under: JRC-FUSAFE 4C
In the next nearest surface region the vacancy concentration is constant and independent of the irradiation temperature between 750 and 300 C and decreases with increasing electron flux. The concentrations of interstitials and of vacancies in the sink-free bulk of the material are equal, dependent on the irradiation temperature, and almost independent of the irradiation flux. The activation migration energies of vacancies and of interstitials decrease with increasing irradiation flux. The dynamic steady state defect concentrations resulting from the rate equations are artificial concentrations, which will not be achieved in finite times.
Bibliographic Reference: Article: Radiation Effects and Defects in Solids, Vol. 114 (1990) pp. 309-313
Record Number: 199110904 / Last updated on: 1994-12-02
Original language: en
Available languages: en