Mixed phase nanocrystalline boron nitride films : Preparation and characterizationFunded under: JRC-ADVMAT 1C
BN films have been deposited by magnetron sputtering from a BN target at bias voltages between 0 and 100 volts and temperatures of 100 C and 500 C on silicon, glass and steel substrates. The films were investigated by SEM, TEM, IR spectrometry and glancing angle X-ray diffraction. All films showed "amorphous" diffraction patterns, with line widths of several degrees, typical of grain sizes in the nanometric range. The measured patterns were compared with computer generated ones assuming various structures, crystal sizes and shapes. Best agreement was obtained assuming a mixed phase model of cubic and hexagonal (graphitic) BN with grains consisting of 250 to 1000 atoms. The structure and grain size of the films were sensitive to bias voltage and deposition temperature. The IR transmission spectra obtained with the films reflected roughly the characteristics of hexagonal BN. However, the presence of c- or w-BN was indicated by a depression in the spectrum at about 1080/cm. All films showed high transmission up to about 200 nm in the near UV region. Adhesion on steel substrates was strongly dependent on the deposition temperature.
Bibliographic Reference: Article: Thin Solid Films, Vol. 199 (1991) pp. 113-122
Record Number: 199111092 / Last updated on: 1994-12-02
Original language: en
Available languages: en