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The deposition of SiO(2) films from tetraethoxysilane (TEOS) is investigated in gas mixtures containing a larger amount of either oxygen or argon. It is shown that films with good insulating properties can be deposited from both mixtures. In Ar/TEOS mixtures, films with C content below 1% have been obtained. In the case of oxygen, the rate must be kept low at low temperature to allow for the disappearance of hydrogen (water) from the film. The dependence of the deposition rate on the temperature, dwell time, and partial pressure of TEOS are shown. Variation of the pressure (at constant flow rate and pumping speed) and ignition of the plasma are different in the oxygen and Ar systems, as well as the dependencies of the deposition rate on temperature. Possible reasons are discussed.

Additional information

Authors: VEPREK-HEIJMAN M G J, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);BOUTARD D, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE)
Bibliographic Reference: Article: Journal of the Electrochemical Society, Vol. 138 (1991) No. 7, pp. 2042-2046
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