Location of oxygen in leached UO(2) single crystals by resonant scattering of He ions
The resonant 16O(alpha,alpha)16O scattering was successfully used to determine the depth and lattice location of O atoms in UO(2) single crystals subjected to leaching. The results indicate that the transformed region has an O content approximately 20% higher than that in the virgin crystal. Moreover, the channelling dips for oxygen could be measured precisely enough to show that the lattice positions of oxygen atoms in the leached layer differ from those in the bulk material, as would be expected for the formation of higher oxides (U(3)O(7), U(2)O(5)).
Bibliographic Reference: Paper presented: 3rd International Conference on Chemical Analysis, Namur (BE), July 8-12, 1991
Availability: Available from (1) as Paper EN 36571 ORA
Record Number: 199210199 / Last updated on: 1994-12-02
Original language: en
Available languages: en