Ion implantation studies of UO(2) and UN
Ion implantation of fission products (rare gases Kr and Xe, volatiles Te, I, Rb, Cs) in UO(2) and UN has been used to perform separate studies to investigate formation and recovery of radiation damage and the behaviour (lattice location, diffusion, release, precipitation) of the fission products. Both radioactive beams (to provide tracers for release measurements) and inactive beams were used, with widely varying doses between approximately 1.0E11 and 1.0E17 ions/cm2 at energies between 40 and 500 keV. The implantation temperatures were varied between 5 and 770 K and furnace anneals were performed up to 2070 K. The analytical techniques applied were Rutherford backscattering (RBS) channelling supported by electron microscopy (TEM, SEM) and conventional counting methods for the tracers. A very large database on damage formation and recovery for both UO(2) and UN and on fission product behaviour has been obtained and is summarised. A large fraction of the damage formed is shown to recover instantaneously, helping to explain the structural stability of the fuels and the absence of amorphisation. Half of the remaining metal defects (the interstitials) migrate to sinks below room temperature in both UO(2) and UN. Also, channelling results indicating coherent precipitation of volatiles even at room temperature are reported, together with new data on low temperature release of these impurities.
Bibliographic Reference: Paper presented: E-MRS Symposium on Nuclear Materials for Fission Reactors, Strasbourg (FR), November 4-8, 1991
Availability: Available from (1) as Paper EN 36437 ORA
Record Number: 199210972 / Last updated on: 1994-12-02
Original language: en
Available languages: en