Unoccupied electronic states in the band structure of NiAl(110)
The unoccupied electronic states of the clean NiAl(110) surface were studied, with angle-resolved inverse photoemission along the Gamma(bar)Chi(bar) and Gamma(bar)Upsilon(bar) directions of the surface Brillouin zone. The use of a rotatable electron gun allowed an independent variation of the incidence angle of the electrons and the exit angle of the photons. Measurements of the photon-emission characteristic of the dipole transitions observed in inverse photoemission can be used to determine the symmetry of the electronic states. For normal incidence of the electron beam, transitions along the Gamma Mu line of the bulk Brillouin zone were detected and the results compared to band-structure calculations available for the high-symmetry lines.
Bibliographic Reference: Article: Physical Review B, Vol. 45 (1992) No. 20, pp. 989-991
Record Number: 199211048 / Last updated on: 1994-12-02
Original language: en
Available languages: en