Ion energy distributions in an ECR-plasma and their influence on the deposition of C:H-films
The ion energy distributions (IED) at the substrate position in an ECR-reactor were measured with a parallel plate, retarding field analyser. These investigations include experiments on the influence of several parameters such as gas pressure, gas type (Ar, CH(4), H(2)), magnetic field configuration, microwave feeding system and dc-bias on the IED. The mean ion energies for an earthed substrate range from 10 to 60 eV. The full widths at half maximum for the symmetric distributions are between 3 and 12 eV. A maximum ion flux to the substrate of 3.5 x 1.0 E16/cm2s was obtained. A qualitative model for the interpretation of the IEDs, which is based on the mean free paths and the diffusion lengths of the charged particles in the plasma, was developed.
Bibliographic Reference: Report: IPP 4/256 DE (1992) 132 pp.
Availability: Available from Max-Planck-Institut für Plasmaphysik, 8046 Garching bei München (DE)
Record Number: 199211264 / Last updated on: 1994-11-29
Original language: de
Available languages: de