Influence of the interaction potential on simulated sputtering and reflection data
The TRIM.SP program, which is based on the binary collision approximation, was changed to handle not only repulsive interaction potentials, but also potentials with an attractive part. Sputtering yields, average depth and reflection coefficients calculated with four different potentials were compared. Three purely repulsive potentials (Molière, Kr-C and ZBL) were used and also an ab initio pair potential, which was calculated especially for silicon bombardment by silicon. The general trends in the calculated results are similar for all potentials applied, but differences between the repulsive potentials and the ab initio potential occur for the reflection coefficients and the sputtering yield at large angles of incidence.
Bibliographic Reference: Article: Zeitschrift für Physik D - Atoms, Molecules and Clusters, Vol. 24 (1992) pp. 171-176
Record Number: 199211327 / Last updated on: 1994-11-29
Original language: en
Available languages: en