Radiation defects in the oxygen-sublattice of UO(2) single crystals
Measuring radiation damage processes occurring in the oxygen sublattice in a heavy matrix such as UO(2) is a very difficult task. The ion backscattering/channelling technique of high energy 4He ions has been successfully applied for this purpose. Use was made of the broad resonance of 16O(alpha,alpha)16O scattering occurring at 7.6 MeV. It was possible to detect oxygen in UO(2) at practically the same counting rate as uranium. UO(2) single crystals were implanted with 200 keV Kr- and 300 keV Xe-ions with doses ranging from 3 x 1.0 E14 to 8 x 1.0 E15 at/cm2 and subsequently annealed in the temperature range of 200-400 C. Ion channelling analysis revealed important defect transformations occurring in the O-sublattice after annealing at 300 C. This effect is dose dependent and disappears for implantation doses exceeding 2 x 1.0 E15 at/cm2.
Bibliographic Reference: Paper presented: 8th International Conference on Ion Beam Modification of Materials, Heidelberg (DE), September 7-11, 1992
Availability: Available from (1) as Paper EN 36846 ORA
Record Number: 199211377 / Last updated on: 1994-11-29
Original language: en
Available languages: en