Unoccupied electronic states of epitaxial iron layers on Cu(100)
Epitaxial growth under ultra-high-vacuum conditions is an important technique for the creation of new phases of materials. This study used inverse photoemission to examine the unoccupied electrical states of epitaxial ion layers on Cu(100). Traditional methods for the study of layer formation in bulk iron prevent the analysis of both electronic structure and magnetism for iron growth in the fcc (face-centred cubic) phase. From the film thickness dependence of an sp-bulk transition it was found that for an eight monolayer film the bulk band structure of fcc iron is nearly completely developed. The d-bands of iron show a ferromagnetic exchange splitting of 1.1 eV, which is considerably smaller than the bulk value of 1.8 eV that is associated with film thicknesses above eighteen monolayers.
Bibliographic Reference: Article: Zeitschrift für Physik B - Condensed Matter (1992) No. 88, pp. 53-61
Record Number: 199211552 / Last updated on: 1994-11-29
Original language: en
Available languages: en