Laser-induced fluorescence measurements on the C(2)Sigma(+)-X(2)Pi(r) transition of the CH radical produced by a microwave excited process plasma
Laser-induced fluorescence (LIF) measurements were made in an a-C:H deposition plasma (excited by a 2.45 GHz microwave) using the uv beam of a frequency-doubled cw dye laser. Miscellaneous vibrational and rotational transitions of the electronically excited CH band system C(2)Sigma(+)-X(2)Pi(r), at lambda approximately equal to 314 nm, were investigated. Spatially resolved rotational, vibrational and translational temperatures, drift velocities and densities of ground state CH molecules have been determined. The most important molecular constants for the transitions under investigation have been compiled and the evaluation procedure for LIF signals is described. Deposition rates of a-C:H layers are measured by observing the temporal development of the interference fringe system on the substrate. The growth rate is compared with the CH flux to the target. A simplified model of the discharge plasma explains the measured data in a roughly quantitative manner.
Bibliographic Reference: Article: Plasma Sources Science Technology, Vol. 1 (1992) pp. 221-231
Record Number: 199310522 / Last updated on: 1994-11-29
Original language: en
Available languages: en