Depth-profiling studies of ion-implanted cesium and rubidium in SIMFUEL and uranium dioxide
The distributions of rubidium and caesium ions implanted at 40 keV in UO(2) and a UO(2)-based SIMFUEL have been depth-profiled by secondary ion mass spectrometry and X-ray photoelectron spectroscopy in conjunction with argon-ion sputtering. A pronounced spike in the near-surface concentration of rubidium or caesium was found to be superimposed on the depleted residual projected-range profile. This redistribution provides a convincing explanation for the anomalous low-temperature release of ion-implanted radiotracers observed in many previous thermal diffusion studies. No evidence was obtained of a similar effect for ion-implanted krypton. Calibration of the argon-ion sputtering rate for UO(2) was achieved by comparison of measured and calculated implanted-ion distributions on the least distorted back side of the profile. The results also offer new insight into radiation-enhanced fission product migration and segregation in oxide nuclear fuels.
Bibliographic Reference: Article: Radiation Effects and Defects in Solids, Vol. 125 (1993) pp. 299-321
Record Number: 199310960 / Last updated on: 1994-11-29
Original language: en
Available languages: en