Silicon deposition on stainless steel surfaces in view of the conditioning of FTU vacuum chamber
The properties of silicon films deposited on stainless steel surfaces held at 77 K, which is approximately the FTU (Frascati Tokamak Upgrade) wall temperature, have been investigated for the first time. Bad adherence and traces of peeling have been achieved by using the same experimental conditions foreseen for the machine: silane concentration in helium equal to (0.11/0.13) and current density in the range (40/150)mA/m2. Conversely, good results have been obtained on substrates held at 273 K. This temperature represents a reasonable compromise for FTU operations.
Bibliographic Reference: Paper presented: Sixth International Conference on Fusion Reactor Materials, Stresa (IT), September 27 - October 1, 1993
Availability: Available from (1) as Paper EN 37766 ORA
Record Number: 199311264 / Last updated on: 1994-11-29
Original language: en
Available languages: en