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Abstract

A remaining batch of 65 samples of the Bi-implanted silicon reference material, issued earlier by the former CBNM of the JRC, has been investigated extensively with respect to the uniformity of the implanted Bi-layer. For this purpose long-term RBS measurements were performed in the multichannel scaling mode. The measured non-uniformity expressed as the relative range of the bismuth fluence between its maximum and minimum values is 7 %. The relative amount of the Bi fluence in individual chips serves as a basis on which to assign individual calibration values to each implanted chip. Furthermore, an estimate of the uniformity within each sample can be deduced from the MCS data.

Additional information

Authors: WÄTJEN U, JRC Geel (BE);BAX H, JRC Geel (BE)
Bibliographic Reference: Paper presented: 11th International Conference on Ion Beam Analysis, Balatonfüred (HU), July 5-9, 1993
Availability: Available from (1) as Paper EN 37525 ORA
Record Number: 199311335 / Last updated on: 1994-11-28
Category: PUBLICATION
Original language: en
Available languages: en
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