Frequency tripling of far-infrared radiation in silicon : Time resolved experiments
The nonlinear optical properties of doped semiconductors in the FIR-regime are due to the nonlinear motion of free electrons with respect to the electric field. This nonlinearity has been examined by frequency tripling experiments. Using fast Ge-hot-electron detectors it was possible to perform experiments with temporal resolution during the laser pulse. With an incident power of up to 1 MW at a wavelength of 676 micron, up to 2 kW power at the tripled frequency was obtained.
Bibliographic Reference: Article: Bulletin SPG/SSP, Vol. 10 (1993) No. 2, p. 23
Record Number: 199410027 / Last updated on: 1994-11-28
Original language: en
Available languages: en