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Abstract

The electron probe micro-analysis technique (EPMA) has been applied to the quantitative analysis of ion implantation depth profiles of ion implanted semiconductor materials. The characteristic X-ray signals from the dopant elements had to be measured at varying electron beam energies and at different tilt angles of the samples to achieve sufficient variations of the signals. A special software has been developed for the control of the stage, the tilting facility, the electron column and data acquisition. By comparing calibrated experimental X-ray signals with theoretically calculated ones the optimisation algorithm calculates the dose density as well as the first two moments of the ion depth profiles. The modified EPMA technique is well suited for the calibration of secondary standards and, because of its capability to determine dose densities, it could also be considered as a method to calibrate primary standards. In principle the technique is applicable to any dopant-substrate combination of elements with Z greater than or equal to 4. The attainable accuracy of the present results of the new EPMA technique is comparable to that of other techniques such as RBS or NAA.

Additional information

Authors: AMMANN N, RWTH Aachen (DE)
Bibliographic Reference: EUR 15037 EN (1993) 84 pp., MF, ECU 4
Availability: (2)
ISBN: ISBN 1 870965 12 4
Record Number: 199410153 / Last updated on: 1994-11-28
Category: PUBLICATION
Original language: en
Available languages: en